DEPENDENCE OF ELECTRO-LUMINESCENCE EFFICIENCY AND MEMORY EFFECT ON MN CONCENTRATION IN ZNS-MN ACTEL DEVICES

被引：19

作者：

MARRELLO, V

ONTON, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 09期

关键词：

D O I：

10.1109/T-ED.1980.20100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1767 / 1770

页数：4

共 11 条

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[4] MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE [J].

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[5]

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[6] EFFECTS OF DOUBLE INSULATING LAYERS ON ELECTROLUMINESCENCE OF EVAPORATED ZNS - MN FILMS [J].

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[7] ORIGIN OF BISTABLE VOLTAGE MARGIN IN AC PLASMA DISPLAY PANEL [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) :853-859

[8]

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[9] VOLTAGE TRANSFER CURVE AND STABILITY-CRITERIA IN THEORY OF AC PLASMA DISPLAY [J].

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[10]

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