ATOMIC LAYER EPITAXY

被引：219

作者：

GOODMAN, CHL ^{[1
]}

PESSA, MV ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE 10,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：R65 / R81

页数：17

共 74 条

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ENGLER, C ;

LORENZ, W .

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FARROW, RFC ;

NOREIKA, AJ ;

SHIRLAND, FA ;

TAKEI, WJ ;

WOOD, S ;

GREGGI, J ;

FRANCOMBE, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :527-528

[16] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

FARROW, RFC ;

JONES, GR ;

WILLIAMS, GM ;

YOUNG, IM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :954-956

[17] CDTE-HGTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A ;

PIAGUET, J .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :713-715

[18]

FAURIER JP, 1984, UNPUB 1984 US WORKSH

[19] DILUTED MAGNETIC SEMICONDUCTORS - AN INTERFACE OF SEMICONDUCTOR PHYSICS AND MAGNETISM [J].

FURDYNA, JK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7637-7643

[20]

FURDYNA JK, UNPUB SUPERLATTICES

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