NIOBIUM-BASED INTEGRATED-CIRCUIT TECHNOLOGIES

被引：20

作者：

TARUTANI, Y

HIRANO, M

KAWABE, U

机构：

来源：

PROCEEDINGS OF THE IEEE | 1989年 / 77卷 / 08期

关键词：

D O I：

10.1109/5.34117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1164 / 1176

页数：13

共 55 条

[1] PROPERTIES OF NBN THIN-FILMS DEPOSITED ON AMBIENT-TEMPERATURE SUBSTRATES [J].

BACON, DD ;

ENGLISH, AT ;

NAKAHARA, S ;

PETERS, FG ;

SCHREIBER, H ;

SINCLAIR, WR ;

VANDOVER, RB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6509-6516

[2] CAPACITANCE AND ELLIPSOMETRICALLY DETERMINED OXIDE THICKNESS OF NB-OXIDE-PB JOSEPHSON TUNNEL-JUNCTIONS [J].

BASAVAIAH, S ;

GREINER, JH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4201-4202

[3] DRUCKSYNTHESE VON NIOBNITRIDEN UND KONSTITUTION VON DELTA-NBN [J].

BRAUER, G ;

KIRNER, H .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1964, 328 (1-2) :34-43

[4] MASS-SPECTROMETRIC STUDY OF NEUTRAL-SPUTTERED SPECIES IN AN RF GLOW-DISCHARGE SPUTTERING SYSTEM [J].

COBURN, JW ;

ECKSTEIN, EW ;

KAY, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :151-154

[5] RESISTIVE TRANSITION + CURRENT DENSITY CHARACTERISTICS IN SUPERCONDUCTING NIOBIUM CONTAINING DISSOLVED GASES [J].

DESORBO, W .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1119-&

[6]

ELLIOTT RP, 1965, CONSTITUTION BINARY

[7] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].

GURVITCH, M ;

WASHINGTON, MA ;

HUGGINS, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :472-474

[8] PREPARATION AND PROPERTIES OF NB JOSEPHSON-JUNCTIONS WITH THIN AL LAYERS [J].

GURVITCH, M ;

WASHINGTON, MA ;

HUGGINS, HA ;

ROWELL, JM .

IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) :791-794

[9]

HARADA Y, 1986, 18TH C SOL STAT DEV, P451

[10] HIGH-SPEED JOSEPHSON INTEGRATED-CIRCUIT TECHNOLOGY [J].

HASUO, S .

IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (02) :740-749

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