AMORPHIZATION AND RECRYSTALLIZATION OF INSB ION-IMPLANTED LAYERS

被引：13

作者：

CHERNYSHEVA, NY

KACHURIN, GA

BOGATYRIOV, VA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 47卷 / 01期

关键词：

D O I：

10.1002/pssa.2210470141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K5 / &

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[2]

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FOYT, AG ;

LINDLEY, WT ;

DONNELLY, JP .

[4]

GUSEVA MI, 1975, MEZHDUNARODNOE RABOC, P510

[5] PLANAR INSB PHOTODIODES FABRICATED BY BE AND MG ION-IMPLANTATION [J].

HURWITZ, CE ;

DONNELLY, JP .

[6]

LANGGUTH G, 1971, ION IMPLANTATION SEM, P228

[7]

Mayer J. W., 1970, ION IMPLANTATION SEM

[8]

Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565

[9]

McNally P. J., 1970, Radiation Effects, V6, P149, DOI 10.1080/00337577008235058

[10]

SMIRNOV LS, 1977, FIZICHESKIE PROTSESS