GROWTH OF CDTE EPITAXIAL-FILMS ON PARA-INSB(111) BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION

被引:38
作者
KIM, TW
KOO, BJ
JUNG, M
KIM, SB
PARK, HL
LIM, H
LEE, JI
KANG, KN
机构
[1] YONSEI UNIV, DEPT PHYS, SEOUL 120749, SOUTH KOREA
[2] AJOU UNIV, DEPT ELECTR ENGN, SUWON 440749, SOUTH KOREA
[3] KOREA INST SCI & TECHNOL, OPT ELECTR LAB, SEOUL 130650, SOUTH KOREA
[4] EWHA WOMANS UNIV, DEPT PHYS, SEOUL 120750, SOUTH KOREA
关键词
D O I
10.1063/1.351360
中图分类号
O59 [应用物理学];
学科分类号
摘要
The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280-degrees-C appeared to have an optimum crystal perfection at a substrate temperature of about 245-degrees-C. These results also indicated that the CdTe films grown above 245-degrees-C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
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页码:1049 / 1051
页数:3
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