OCAIZATION IN DISORDERED 2-DIMENSIONAL ELECTRON-SYSTEMS UNDER THE INFLUENCE OF EXTERNAL ELECTRIC AND MAGNETIC-FIELDS

被引：12

作者：

BRYKSIN, VV ^{[1
]}

SCHLEGEL, H ^{[1
]}

KLEINERT, P ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKTRON,D-10117 BERLIN,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.49.13697

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The self-consistent theory of Anderson localization derived by Vollhardt and Wolfle has been extended to treat the influence of small electric and magnetic fields. Numerical results are obtained for the negative magnetoresistance even for higher scattering strengths (k(F)lambda greater than or similar to 1) which cannot be treated by the weak-localization theory. We compare with experimental data and theoretical results derived from a microscopic approach. A dc electric field gives rise to a delocalization edge which agrees for one-dimensional systems with the exact value and which depends exponentially OU k(F)lambda for two-dimensional disordered electron systems. Remnants of the two-dimensional delocalization edge should only be observed experimentally in low-mobility heterostructures (k(F)lambda approximately 1) at the lowest temperatures.

引用

页码：13697 / 13703

页数：7

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