TEMPERATURE AND MAGNETIC-FIELD DEPENDENCES OF THE CONDUCTIVITY IN DELTA-DOPED GAAS WITH ELECTRON CONCENTRATIONS IN THE DILUTE METALLIC LIMIT

被引：15

作者：

ASCHE, M

FRIEDLAND, KJ

KLEINERT, P

KOSTIAL, H

机构：

[1] Paul Drude Inst. fur Festkorperelektron., Berlin

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 07期

关键词：

D O I：

10.1088/0268-1242/7/7/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature and magnetic field dependences of the resistivity of a two-dimensional electron gas in delta-doped GaAs are investigated in the dilute metallic limit. The results of numerical fitting procedures of the experimental data with theoretical predictions yield the contributions of the single-electron effect for weak localization and the Coulomb corrections from the Cooper and diffusion channels. The values of the scattering times involved for elastic, inelastic and spin interaction processes are determined.

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页码：923 / 930

页数：8

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