CORRECTIONS TO THE VAN-DER-WAALS FORCES IN APPLICATION TO ATOMIC-FORCE MICROSCOPY

被引：24

作者：

BORDAG, M

KLIMCHITSKAYA, GL

MOSTEPANENKO, VM

机构：

[1] N W POLYTECH INST,DEPT PHYS,ST PETERSBURG 191065,RUSSIA

[2] ST PETERSBURG STATE TECHNOL INST,DEPT MATH,ST PETERSBURG 198013,RUSSIA

来源：

SURFACE SCIENCE | 1995年 / 328卷 / 1-2期

关键词：

ATOMIC FORCE MICROSCOPY; ATOM SOLID INTERACTIONS; SCATTERING; DIFFRACTION; ATOM SOLID REACTIONS; CONSTRUCTION AND USE OF EFFECTIVE INTERATOMIC INTERACTIONS; SCANNING TUNNELING MICROSCOPY; SURFACE DEFECTS; SURFACE ROUGHENING;

D O I：

10.1016/0039-6028(95)00025-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dependence of the van der Waals force on the distance between the atomic force microscope tip and the plane surface of the sample is calculated. The tip is modelled by a paraboloid with stochastic perturbations of its surface. The analysis of the corresponding corrections to the van der Waals force shows that one may use the paraboloid model of the tip for the interpretation of all experimental data in atomic force microscopy.

引用

页码：129 / 134

页数：6

共 16 条

[1] CHARGE STORAGE IN A NITRIDE-OXIDE-SILICON MEDIUM BY SCANNING CAPACITANCE MICROSCOPY [J].