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INVESTIGATION OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH AL2O3 INSULATING LAYERS OBTAINED BY ELECTRON-GUN EVAPORATION
被引:6
作者
:
LECONTELLEC, M
论文数:
0
引用数:
0
h-index:
0
LECONTELLEC, M
MORIN, F
论文数:
0
引用数:
0
h-index:
0
MORIN, F
机构
:
来源
:
THIN SOLID FILMS
|
1978年
/ 52卷
/ 01期
关键词
:
D O I
:
10.1016/0040-6090(78)90255-9
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:63 / 68
页数:6
相关论文
共 5 条
[1]
THIN-FILM TRANSISTORS
ANDERSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IMPERIAL COLL,DEPT ELECT ENGN,SECT MAT,LONDON SW7 2BT,ENGLAND
IMPERIAL COLL,DEPT ELECT ENGN,SECT MAT,LONDON SW7 2BT,ENGLAND
ANDERSON, JC
[J].
THIN SOLID FILMS,
1976,
36
(02)
: 299
-
312
[2]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[3]
Fischer A. G., 1976, Microelectronics, V7, P5
[4]
ANNEALING OF SURFACE-STATES IN POLYCRYSTALLINE-SILICON-GATE CAPACITORS
HICKMOTT, TW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
HICKMOTT, TW
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(02)
: 723
-
733
[5]
ION MIGRATION IN OXIDES OF MIS-STRUCTURES (AL-AL203-SI)
PISTOULET, B
论文数:
0
引用数:
0
h-index:
0
机构:
Centre d'Etudes d'Electronique des Solides associé au C.N.R.S., Faculté des Sciences de Montpellier
PISTOULET, B
ROUZEYRE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Centre d'Etudes d'Electronique des Solides associé au C.N.R.S., Faculté des Sciences de Montpellier
ROUZEYRE, M
AUVERGNE, D
论文数:
0
引用数:
0
h-index:
0
机构:
Centre d'Etudes d'Electronique des Solides associé au C.N.R.S., Faculté des Sciences de Montpellier
AUVERGNE, D
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(12)
: 969
-
+
←
1
→
共 5 条
[1]
THIN-FILM TRANSISTORS
ANDERSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IMPERIAL COLL,DEPT ELECT ENGN,SECT MAT,LONDON SW7 2BT,ENGLAND
IMPERIAL COLL,DEPT ELECT ENGN,SECT MAT,LONDON SW7 2BT,ENGLAND
ANDERSON, JC
[J].
THIN SOLID FILMS,
1976,
36
(02)
: 299
-
312
[2]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[3]
Fischer A. G., 1976, Microelectronics, V7, P5
[4]
ANNEALING OF SURFACE-STATES IN POLYCRYSTALLINE-SILICON-GATE CAPACITORS
HICKMOTT, TW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
HICKMOTT, TW
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(02)
: 723
-
733
[5]
ION MIGRATION IN OXIDES OF MIS-STRUCTURES (AL-AL203-SI)
PISTOULET, B
论文数:
0
引用数:
0
h-index:
0
机构:
Centre d'Etudes d'Electronique des Solides associé au C.N.R.S., Faculté des Sciences de Montpellier
PISTOULET, B
ROUZEYRE, M
论文数:
0
引用数:
0
h-index:
0
机构:
Centre d'Etudes d'Electronique des Solides associé au C.N.R.S., Faculté des Sciences de Montpellier
ROUZEYRE, M
AUVERGNE, D
论文数:
0
引用数:
0
h-index:
0
机构:
Centre d'Etudes d'Electronique des Solides associé au C.N.R.S., Faculté des Sciences de Montpellier
AUVERGNE, D
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(12)
: 969
-
+
←
1
→