ANNEALING OF SURFACE-STATES IN POLYCRYSTALLINE-SILICON-GATE CAPACITORS

被引：74

作者：

HICKMOTT, TW ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.323662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：723 / 733

页数：11

共 58 条

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