ANNEALING OF SURFACE-STATES IN POLYCRYSTALLINE-SILICON-GATE CAPACITORS

被引：74

作者：

HICKMOTT, TW ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.323662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：723 / 733

页数：11

共 58 条

[31] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[32] DIFFUSION OF HYDROGEN AND DEUTERIUM IN FUSED QUARTZ [J].

LEE, RW ;

FRANK, RC ;

SWETS, DE .

JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (04) :1062-&

[33]

LEE RW, 1964, PHYS CHEM GLASSES-B, V5, P35

[34]

Lell E, 1966, PROGR CERAMIC SCI, V4, P3

[35] CALCULATION OF CAPACITANCE OF SEMICONDUCTOR SURFACE WITH APPLICATION TO SILICON [J].

MARCUS, PM .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) :496-&

[36] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES [J].

MONTILLO, F ;

BALK, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1463-+

[37] IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES [J].

OSBURN, CM ;

BASSOUS, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) :89-92

[38] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS [J].

OSBURN, CM ;

CHOU, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1377-1384

[39] ELECTRONIC PROPERTIES OF SI-SIO2 INTERFACE AS A FUNCTION OF OXIDE GROWTH CONDITIONS .2. FIXED CHARGE [J].

PAUTRAT, JL ;

PFISTER, JC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02) :669-&

[40] ENERGETIC DISTRIBUTION OF SURFACE CONDITIONS WITH SI/SIO2 INTERFACE - EFFECT OF DIFFERENT TREATMENTS [J].

PAUTRAT, JL ;

PFISTER, JC .

SOLID STATE COMMUNICATIONS, 1970, 8 (15) :1173-+

← 1 2 3 4 5 6 →