CALCULATION OF CAPACITANCE OF SEMICONDUCTOR SURFACE WITH APPLICATION TO SILICON

被引：18

作者：

MARCUS, PM

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1964年 / 8卷 / 05期

关键词：

D O I：

10.1147/rd.85.0496

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

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页码：496 / &

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共 11 条

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[10] ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON
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