ELECTRONIC PROPERTIES OF SI-SIO2 INTERFACE AS A FUNCTION OF OXIDE GROWTH CONDITIONS .2. FIXED CHARGE

被引：9

作者：

PAUTRAT, JL

PFISTER, JC

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 11卷 / 02期

关键词：

D O I：

10.1002/pssa.2210110230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：669 / &

共 13 条

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[10]

PAUTRAT JL, 1972, PHYS ST S-A, V11

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