INFLUENCE OF DISSOLVED OXYGEN IN SIO2 ON C-V CHARACTERISTICS

被引：8

作者：

KUBO, S

ICHINOHE, E

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 09期

关键词：

D O I：

10.1143/JJAP.6.1072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1072 / +

页数：1

共 12 条

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[9] INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON SI SURFACE POTENTIAL IN SI-SIO2 SYSTEM [J].

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[10] ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON [J].

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