HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES

被引：115

作者：

MONTILLO, F

BALK, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 09期

关键词：

D O I：

10.1149/1.2408355

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1463 / +

页数：1

共 24 条

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[4] SURFACE PROPERTIES OF OXIDIZED GERMANIUM-DOPED SILICON [J].

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[6]

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[8] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[9] EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM [J].

CHEROFF, G ;

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[10]

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