ENERGETIC DISTRIBUTION OF SURFACE CONDITIONS WITH SI/SIO2 INTERFACE - EFFECT OF DIFFERENT TREATMENTS

被引：11

作者：

PAUTRAT, JL

PFISTER, JC

机构：

来源：

SOLID STATE COMMUNICATIONS | 1970年 / 8卷 / 15期

关键词：

D O I：

10.1016/0038-1098(70)90354-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1173 / +

页数：1

共 12 条

[1]

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[6]

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[7]

NANNONI R, 1966, CR ACAD SCI B PHYS, V262, P729

[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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[9] LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].

NICOLLIAN, EH ;

GOETZBERGER, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :108-+

[10] INJECTION AND MIGRATION OF CHARGES IN AN OXIDE OF A SEMICONDUCTOR METAL-OXIDE STRUCTURE [J].

SAMINADA.K ;

PAUTRAT, JL ;

PFISTER, JC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (10) :1709-+

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