INJECTION AND MIGRATION OF CHARGES IN AN OXIDE OF A SEMICONDUCTOR METAL-OXIDE STRUCTURE

被引：8

作者：

SAMINADA.K

PAUTRAT, JL

PFISTER, JC

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1968年 / 29卷 / 10期

关键词：

D O I：

10.1016/0022-3697(68)90154-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1709 / +

页数：1

共 19 条

[1] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[2] SURFACE CHARGE AFTER ANNEALING OF AL-SIO2-SI STRUCTURES UNDER BIAS [J].

GOETZBERGER, A ;

NIGH, HE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1454-+

[3] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].

GOODMAN, AM ;

ONEILL, JJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3580-&

[4]

GROVE AS, 1965, P IEEE, V53, P627

[5] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :222-+

[6] PREPARATION OF ATOMICALLY CLEAN SURFACES OF SI AND GE BY HEATING IN VACUUM [J].

JONA, F .

APPLIED PHYSICS LETTERS, 1965, 6 (10) :205-&

[7]

KOOI E, 1965, PHILIPS RES REP, V20, P306

[8]

KOOI E, 1965, PHILIPS RES REP, V20, P595

[9] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1403-&

[10] FIELD EFFECT STUDIES OF OXIDIZED SILICON SURFACE [J].

LINDMAYER, J .

SOLID-STATE ELECTRONICS, 1966, 9 (03) :225-+

← 1 2 →