DYNAMICAL RECOVERY AND SELF-DIFFUSION IN SILICON

被引：25

作者：

SIETHOFF, H ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST PHYS 4,D-3400 GOTTINGEN,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1978年 / 37卷 / 06期

关键词：

D O I：

10.1080/01418617808239202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：711 / 718

页数：8

共 28 条

[1]

ALEXANDER H, 1961, Z METALLKD, V52, P344

[2] DYNAMICAL RECOVERY OF GERMANIUM [J].

ALEXANDER, H ;

HAASEN, P .

ACTA METALLURGICA, 1961, 9 (11) :1001-1003

[3]

[Anonymous], 1973, HOCHTEMPERATURPLASTI

[4] A MODEL FOR STEADY STATE CREEP BASED ON MOTION OF JOGGED SCREW DISLOCATIONS [J].

BARRETT, CR ;

NIX, WD .

ACTA METALLURGICA, 1965, 13 (12) :1247-&

[5]

Burenkov Yu. A., 1974, Soviet Physics - Solid State, V16, P963

[6] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].

FAIRFIEL.JM ;

MASTERS, BJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&

[7] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J].

GHOSHTAGORE, RN .

PHYSICAL REVIEW LETTERS, 1966, 16 (20) :890-+

[8]

Kojima K., 1971, Crystal Lattice Defects, V2, P147

[9]

MAYER HJ, 1976, LATTICE DEFECTS SEMI, P186

[10] DIFFUSION OF GE IN SIGE ALLOYS [J].

MCVAY, GL ;

DUCHARME, AR .

PHYSICAL REVIEW B, 1974, 9 (02) :627-631

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