NOISE IN SOLID-STATE DEVICES AND LASERS

被引：175

作者：

VANDERZI.A

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 08期

关键词：

D O I：

10.1109/PROC.1970.7896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1178 / +

页数：1

共 194 条

[1] SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J].

ABOWITZ, G ;

ARNOLD, E ;

LEVENTHA.EA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :775-+

[2] NOISE FIGURE OF UHF TRANSISTORS AS A FUNCTION OF FREQUENCY AND BIAS CONDITIONS [J].

AGOURIDIS, DC ;

VANDERZI.A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (12) :808-+

[3]

AGOURIDIS DC, 1962, P IRE, V50, P2121

[4] ON THE EXCESS PHOTON NOISE IN SINGLE-BEAM MEASUREMENTS WITH PHOTO-EMISSIVE AND PHOTO-CONDUCTIVE CELLS [J].

ALKEMADE, CTJ .

PHYSICA, 1959, 25 (11) :1145-1158

[5]

ANDERSON RL, 1952, IRE T ELECTRON DEV, V1, P20

[6] PHOTOCOUNT DISTRIBUTIONS AND FIELD STATISTICS [J].

ARECCHI, FT ;

BERNE, A ;

SONA, A ;

BURLAMACCHI, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (09) :341-+

[7] OPTIMUM SOURCE ADMITTANCE FOR MINIMUM NOISE FIGURE OF MICROWAVE TRANSISTORS [J].

BACHTOLD, W ;

STRUTT, MJO .

ELECTRONICS LETTERS, 1968, 4 (17) :346-&

[8]

BACHTOLD W, 1968, ELECTRON LETT, V4, P209

[9] NOISE-PARAMETER MEASUREMENTS OF MICROWAVE TRANSISTORS UP TO 2 4GHZ [J].

BACHTOLD, W ;

STRUTT, MJO .

ELECTRONICS LETTERS, 1967, 3 (07) :323-&

[10]

BACHTOLD W, 1966, ELECTRON LETT, V2, P335

← 1 2 3 4 5 6 7 8 9 10 →