ON THE TEMPERATURE SENSITIVITY OF SEMICONDUCTOR-LASERS

被引：27

作者：

OGORMAN, J

LEVI, AFJ

SCHMITTRINK, S

TANBUNEK, T

COBLENTZ, DL

LOGAN, RA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.107001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of below-threshold emission from multiple quantum well semiconductor lasers is well characterized by a power law, in excellent agreement with Landau-Ginzburg theory of second-order phase transitions. We thereby show that it is the temperature dependence of net gain and not that of nonradiative recombination which primarily determines temperature sensitivity of threshold in long-wavelength injection lasers.

引用

页码：157 / 159

页数：3