VACANCIES AND INTERSTITIALS IN GERMANIUM AND SILICON

被引：15

作者：

MAYBURG, S

机构：

来源：

ACTA METALLURGICA | 1956年 / 4卷 / 01期

关键词：

D O I：

10.1016/0001-6160(56)90109-2

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：52 / 57

页数：6

共 9 条

[1]

Crawford J., 1954, COMMUNICATION

[2]

ESAKI G, 1953, PHYS REV, V89, P1032

[3]

FULLER, 1954, PHYS REV, V93, P1182

[4]

JAMES HM, 1951, Z PHYS CHEM, V198, P107

[5] CRYSTALLIZATION OF SILICON FROM A FLOATING LIQUID ZONE [J].

KECK, PH ;

GOLAY, MJE .

PHYSICAL REVIEW, 1953, 89 (06) :1297-1297

[6]

LETAW, 1954, PHYS REV, V93, P892

[7] VACANCIES AND INTERSTITIALS IN HEAT TREATED GERMANIUM [J].

MAYBURG, S .

PHYSICAL REVIEW, 1954, 95 (01) :38-43

[8] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J].

PRINCE, MB .

PHYSICAL REVIEW, 1954, 93 (06) :1204-1206

[9]

ZENER C, 1951, J APPL PHYS, V22, P373