NEGATIVE MAGNETORESISTANCE EFFECT IN CDIN2S4

被引:3
作者
IWAI, T [1 ]
ENDO, S [1 ]
IRIE, T [1 ]
机构
[1] SCI UNIV TOKYO,FAC TECHNOL,DEPT ELECT ENGN,KAGURAZAKA,SHINJUKU,TOKYO,JAPAN
关键词
D O I
10.1143/JPSJ.36.307
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:307 / 307
页数:1
相关论文
共 4 条
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ENDO, S ;
SUDO, I ;
IRIE, T .
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[3]   2 BAND MODEL FOR NEGATIVE MAGNETORESISTANCE IN HEAVILY DOPED SEMICONDUCTORS [J].
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RAUDORF, TW .
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