HYDROGENATION OF SI(113) SURFACES BY PHOTOELECTROCHEMICAL TREATMENT

被引：26

作者：

JACOBI, K ^{[1
]}

GRUYTERS, M ^{[1
]}

GENG, P ^{[1
]}

BITZER, T ^{[1
]}

AGGOUR, M ^{[1
]}

RAUSCHER, S ^{[1
]}

LEWERENZ, HJ ^{[1
]}

机构：

[1] HAHN MEITNER INST BERLIN GMBH,GRENZFLACHEN ABT,D-14109 BERLIN,GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.51.5437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si(113) surfaces have been prepared photoelectrochemically in an aqueous solution of NH4F. Using high-resolution electron-energy-loss spectroscopy and low-energy electron diffraction, it is shown that Si(113)1×1-H, i.e., a bulk-truncated and H-terminated Si(113) surface, can be prepared. It is concluded that the truncation plane is such that all SiH bonds lie in the (110) plane. The HSiH (dihydride) groups are located in the surface and the SiH (monohydride) groups in the second layer. © 1995 The American Physical Society.

引用

页码：5437 / 5440

页数：4

共 35 条

[1] CRITICAL-BEHAVIOR AT CHIRAL MELTING - DISORDERING OF THE SI(113)-(3X1) RECONSTRUCTION [J].

ABERNATHY, DL ;

BIRGENEAU, RJ ;

BLUM, KI ;

MOCHRIE, SGJ .

PHYSICAL REVIEW LETTERS, 1993, 71 (05) :750-753

[2] BAND BENDING IN THE INITIAL-STAGES OF SCHOTTKY-BARRIER FORMATION FOR GALLIUM ON SI(113) [J].

ALTHAINZ, P ;

MYLER, U ;

JACOBI, K .

PHYSICAL REVIEW B, 1990, 41 (05) :2849-2854

[3] ADATOM-INDUCED DONOR STATES DURING THE EARLY STAGES OF SCHOTTKY-BARRIER FORMATION - GA, IN, AND PB ON SI(113) [J].

ALTHAINZ, P ;

MYLER, U ;

JACOBI, K .

PHYSICAL REVIEW B, 1991, 43 (17) :14157-14163

[4] ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION [J].

BECKER, RS ;

HIGASHI, GS ;

CHABAL, YJ ;

BECKER, AJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (15) :1917-1920

[5] INFLUENCE OF PH IN ELECTROLYTIC HYDROGEN TERMINATION OF SILICON [J].

BITZER, T ;

LEWERENZ, HJ ;

GRUYTERS, M ;

JACOBI, K .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1993, 359 (1-2) :287-292

[6] INSITU PREPARATION OF HYDROGEN-TERMINATED SILICON SINGLE-CRYSTAL SURFACES [J].

BITZER, T ;

LEWERENZ, HJ .

SURFACE SCIENCE, 1992, 269 :886-892

[7] ELECTROCHEMICALLY PREPARED SI(111) 1X1-H SURFACE [J].

BITZER, T ;

GRUYTERS, M ;

LEWERENZ, HJ ;

JACOBI, K .

APPLIED PHYSICS LETTERS, 1993, 63 (03) :397-399

[8] ELECTRON-ENERGY-LOSS CHARACTERIZATION OF THE H-TERMINATED SI(111) AND SI(100) SURFACES OBTAINED BY ETCHING IN NH4F [J].

DUMAS, P ;

CHABAL, YJ .

CHEMICAL PHYSICS LETTERS, 1991, 181 (06) :537-543

[9] MORPHOLOGY OF HYDROGEN-TERMINATED SI(111) AND SI(100) SURFACES UPON ETCHING IN HF AND BUFFERED-HF SOLUTIONS [J].

DUMAS, P ;

CHABAL, YJ ;

JAKOB, P .

SURFACE SCIENCE, 1992, 269 :867-878

[10] SPECTRAL RESTORATION IN HREELS [J].

FREDERICK, BG ;

NYBERG, GL ;

RICHARDSON, NV .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1993, 64-5 :825-834

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