LOW-TEMPERATURE CVD GARNET GROWTH

被引：6

作者：

COWHER, ME ^{[1
]}

SEDGWICK, TO ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 03期

关键词：

D O I：

10.1016/0022-0248(79)90088-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial garnet films of Er3Fe5O12, (Eu, Y)3Fe5O12 and (Eu, Yb)3Fe5O12 which exhibit submicron magnetic stripe domains have been chemically vapor deposited (CVD) on non-magnetic garnet substrates. The deposition process which uses metal organic source compounds was carried out at relatively low temperatures, 800-1000°C. Both stress induced and growth induced magnetic anisotropy have been produced in the films, the latter of which was observed for the first time in CVD garnet films. © 1979.

引用

页码：399 / 402

页数：4