EPITAXIAL GARNET-FILMS BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

COWHER, ME ^{[1
]}

SEDGWICK, TO ^{[1
]}

LANDERMANN, J ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 03期

关键词：

D O I：

10.1007/BF02655290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：621 / 633

页数：13

共 16 条

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[2] COMPOSITIONAL VARIATION IN YIG FILMS
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OEFFINGER, TR
[J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (07) : 627 - +
[3] VAPOR-PRESSURES OF SEVERAL METAL-2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONE COMPLEXES MEASURED BY A KNUDSEN EFFUSION METHOD
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CURTIS, BJ
[J]. JOURNAL OF THERMAL ANALYSIS, 1973, 5 (01): : 111 - 115
[4] RARE EARTH-YTTRIUM IRON-GALLIUM GARNET EPITAXIAL FILMS FOR MAGNETIC BUBBLE DOMAIN APPLICATIONS
GIESS, EA
ARGYLE, BE
CALHOUN, BA
CRONEMEYER, DC
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PLASKETT, TS
[J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (11) : 1141 - +
[5] GALLIUM DIETHYL CHLORIDE - A NEW SUBSTANCE IN PREARATION OF EPITAXIAL GALLIUM ARSENIDE
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SACK, W
NICKL, JJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1316 - &
[6] MANASEVI.HM, 1970, J ELECTROCHEM SOC, V117, pC196
[7] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
MANASEVIT, HM
ERDMANN, FM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +
[8] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +
[9] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 644 - +
[10] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
MANASEVIT, HM
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +

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