THE EFFECT OF SR AND BI ON THE SI(100) SURFACE OXIDATION - AUGER-ELECTRON SPECTROSCOPY, LOW-ENERGY ELECTRON-DIFFRACTION, AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY

被引：10

作者：

FAN, WC ^{[1
]}

MESARWI, A ^{[1
]}

IGNATIEV, A ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE EPITAXY,HOUSTON,TX 77204

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.576438

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of Sr and Bi on the oxidation of the Si (100) surface has been studied by Auger electron spectroscopy, low electron diffraction, and x-ray photoelectron spectroscopy. A dramatic enhancement, by a factor of 10, of the Si oxidation has been observed for Si (100) with a Sr overlayer. The SR-enhanced Si oxidation has been studied as a function of O2exposure and Sr coverage. In contrast to the oxidation promotion of Sr on Si, it has been also observed that a Bi overlayer on Si (100) reduced Si oxidation significantly. Sr adsorption on the Si (100) with a Bi overlayer enhances Si oxidation only at Sr coverage θSr>0.3 ML. © 1990, American Vacuum Society. All rights reserved.

引用

页码：4017 / 4020

页数：4

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