SURFACE RECOMBINATION VELOCITY AND LIFETIME IN INP

被引：38

作者：

BOTHRA, S ^{[1
]}

TYAGI, S ^{[1
]}

GHANDHI, SK ^{[1
]}

BORREGO, JM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT SYST ENGN,TROY,NY 12180

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 01期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0038-1101(91)90199-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lifetime and surface recombination velocity in InP are discussed in this paper. It is shown that carrier trapping may be important in the interpretation of transient lifetime measurements. The surface recombination velocity is found to be doping dependent, indicating pinning of the surface Fermi level. The effects of the surface Fermi level on the surface recombination velocity and the surface generation velocity are used to study the Fermi level pinning at the surface of InP. The capture cross-sections of surface states are estimated to be on the order of 1 x 10(-13) cm2.

引用

页码：47 / 50

页数：4

共 28 条

[1]

AHRENKIEL R, COMMUNICATION

[2] MINORITY-CARRIER LIFETIME IN ITO INP HETEROJUNCTIONS [J].