RECOMBINATION DEPENDENT CHARACTERISTICS OF SILICON P+-N-N+ EPITAXIAL DIODES

被引：18

作者：

VENKATESWARAN, K

ROULSTON, DJ

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90086-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：311 / +

页数：1

共 16 条

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