CAVITY FORMATION IN SEMICONDUCTOR-LASERS

被引：5

作者：

OGORMAN, J

LEVI, AFJ

COBLENTZ, D

TANBUNEK, T

LOGAN, RA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temporal development of both lasing light intensity and spectral content is influenced by the number of round-trips photons make inside a Fabry-Perot laser. A surprisingly large number of cavity round trips (n greater than or similar to 100) are required for laser emission intensity and spectral content to approach dc values. With decreasing n the laser increasingly takes on the character of a light emitting diode.

引用

页码：889 / 891

页数：3

共 6 条

[1]

ARRECHI FT, 1972, LASER HDB, V1

[2] STRAINED MULTIPLE QUANTUM-WELL LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].