EXPOSURE OF INP TO HYDROGEN PLASMA IN THE PRESENCE OF A SACRIFICIAL INP - AN X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY

被引：4

作者：

BALASUBRAMANIAN, S

GOPINATH, CS

SUBRAMANIAN, S

BALASUBRAMANIAN, N

机构：

[1] INDIAN INST TECHNOL,CTR REG SOPHISTICATED INSTRUMENTAT,MADRAS 600036,TAMIL NADU,INDIA

[2] INDIAN TEL IND LTD,MICROELECTR LAB,BANGALORE 560016,INDIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 09期

关键词：

D O I：

10.1088/0268-1242/9/9/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray photoelectron spectroscopic (XPS) studies of InP surfaces subjected to a new method of hydrogen plasma treatment are reported here. The XPS analysis shows that the usually observed phosphorus loss can be reduced by the use of a 'sacrificial' InP immersed in the hydrogen plasma with the test InP sample kept away from the electrodes in the downstream. The results suggest that the 'sacrificial' InP loses P during the H plasma exposure and thus becomes a source of P to compensate for the loss suffered by the test InP kept downstream.

引用

页码：1604 / 1607

页数：4

共 18 条

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