HYDROGEN PASSIVATION OF ACCEPTORS IN P-INP

[1] PASSIVATION OF ZINC ACCEPTORS IN INP BY ATOMIC-HYDROGEN COMING FROM ARSINE DURING METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (09) : 758 - 760

[2] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50

[3] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110

[4] CHEVALLIER J, 1988, 15TH INT C DEF SEM B

[5] EVIDENCE FOR COMPLEXES OF HYDROGEN WITH DEEP-LEVEL DEFECTS IN BULK III-V MATERIALS [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (17) : 1755 - 1757

[6] EFFECT OF COOLING AMBIENT ON ELECTRICAL ACTIVATION OF DOPANTS IN MOVPE OF INP [J]. ELECTRONICS LETTERS, 1988, 24 (15) : 929 - 931

[7] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1098 - 1100

[8] PASSIVATION OF ACCEPTORS IN INP RESULTING FROM CH4/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1989, 55 (01) : 56 - 58

[9] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1102 - 1105

[10] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1078 - 1080

[1] PASSIVATION OF ZINC ACCEPTORS IN INP BY ATOMIC-HYDROGEN COMING FROM ARSINE DURING METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (09) : 758 - 760

[2] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50

[3] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110

[4] CHEVALLIER J, 1988, 15TH INT C DEF SEM B

[5] EVIDENCE FOR COMPLEXES OF HYDROGEN WITH DEEP-LEVEL DEFECTS IN BULK III-V MATERIALS [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (17) : 1755 - 1757

[6] EFFECT OF COOLING AMBIENT ON ELECTRICAL ACTIVATION OF DOPANTS IN MOVPE OF INP [J]. ELECTRONICS LETTERS, 1988, 24 (15) : 929 - 931

[7] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1098 - 1100

[8] PASSIVATION OF ACCEPTORS IN INP RESULTING FROM CH4/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1989, 55 (01) : 56 - 58

[9] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1102 - 1105

[10] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1078 - 1080