HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS

被引：159

作者：

JOHNSON, NM

BURNHAM, RD

STREET, RA

THORNTON, RL

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.33.1102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1102 / 1105

页数：4

共 21 条

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[8] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY [J].

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[9] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (08) :874-876

[10] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

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MOYER, MD .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :787-789

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