USE OF A 3-LAYER QUANTUM-WELL STRUCTURE TO ACHIEVE AN ABSORPTION-EDGE BLUESHIFT

Theoretical calculations are used to propose a novel structure for a quantum-well electro-optic device which gives a large blueshift of the absorption edge on application of an electric field. The structure provides spatial separation of the electron-hole pair in the ground state at zero applied field. This is achieved by use of two materials within the well which have a type 11 band line-up relative to each other but are type I relative to the barrier material. The combination of InAs0.4P0.6/In0.53Ga0.47As wells with InP barriers is expected to fulfill these requirements and also to operate in the 1.5 mum region.