USE OF A 3-LAYER QUANTUM-WELL STRUCTURE TO ACHIEVE AN ABSORPTION-EDGE BLUESHIFT

被引：23

作者：

STAVRINOU, PN

HAYWOOD, SK

PARRY, G

机构：

[1] Department of Electronic and Electrical Engineering, University College London, Torrington Place

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.110855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Theoretical calculations are used to propose a novel structure for a quantum-well electro-optic device which gives a large blueshift of the absorption edge on application of an electric field. The structure provides spatial separation of the electron-hole pair in the ground state at zero applied field. This is achieved by use of two materials within the well which have a type 11 band line-up relative to each other but are type I relative to the barrier material. The combination of InAs0.4P0.6/In0.53Ga0.47As wells with InP barriers is expected to fulfill these requirements and also to operate in the 1.5 mum region.

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页码：1251 / 1253

页数：3

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