INGAAS-INP MULTIPLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：55

作者：

SKOLNICK, MS

TAYLOR, LL

BASS, SJ

PITT, AD

MOWBRAY, DJ

CULLIS, AG

CHEW, NG

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：24 / 26

页数：3

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BASS, SJ
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[2] MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 221 - 226
[3] GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 288 - 295
[4] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201
[5] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552
[6] EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5428 - 5432
[7] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (20) : 1384 - 1386
[8] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1110 - 1111
[10] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587