EFFECT OF GROWTH TEMPERATURE ON THE OPTICAL, ELECTRICAL AND CRYSTALLOGRAPHIC PROPERTIES OF EPITAXIAL INDIUM GALLIUM-ARSENIDE GROWN BY MOCVD IN AN ATMOSPHERIC-PRESSURE REACTOR

被引：28

作者：

BASS, SJ

BARNETT, SJ

BROWN, GT

CHEW, NG

CULLIS, AG

PITT, AD

SKOLNICK, MS

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90464-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：378 / 385

页数：8

共 22 条

[1] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[2] MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS [J].

BASS, SJ ;

SKOLNICK, MS ;

CHUDZYNSKA, H ;

SMITH, L .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :221-226

[3]

BASS SJ, 1984, J CRYST GROWTH, V68, P129

[4] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP [J].

CAREY, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :89-91

[5] GROWTH OF HIGH-QUALITY GAINAS ON INP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

CHAN, KT ;

ZHU, LD ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :44-46

[6] IODINE ION MILLING OF INDIUM-CONTAINING COMPOUND SEMICONDUCTORS [J].

CHEW, NG ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :142-144

[7]

COLE JM, 1981, I PHYS C SER, V56, P269

[8]

DECREMOUX B, 1981, I PHYS C SER, V56, P115

[9]

Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10

[10] PHOTOLUMINESCENCE OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GALNAS [J].

FRY, KL ;

KUO, CP ;

COHEN, RM ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :955-957

← 1 2 3 →