GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE

被引:31
作者
CLAXTON, PA
ROBERTS, JS
DAVID, JPR
SOTOMAYORTORRES, CM
SKOLNICK, MS
TAPSTER, PR
NASH, KJ
机构
[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
[2] UNIV ST ANDREWS,DEPT PHYS,ST ANDREWS KY16 9SS,FIFE,SCOTLAND
关键词
D O I
10.1016/0022-0248(87)90406-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:288 / 295
页数:8
相关论文
共 13 条
  • [1] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
    CHENG, KY
    CHO, AY
    DRUMMOND, TJ
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149
  • [2] SURFACE PROCESSES CONTROLLING GROWTH OF GAXIN1-XAS AND GAXIN1-XP ALLOY-FILMS BY MBE
    FOXON, CT
    JOYCE, BA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 75 - 83
  • [3] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
    GOETZ, KH
    BIMBERG, D
    JURGENSEN, H
    SELDERS, J
    SOLOMONOV, AV
    GLINSKII, GF
    RAZEGHI, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552
  • [4] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS
    KANE, MJ
    APSLEY, N
    ANDERSON, DA
    TAYLOR, LL
    KERR, T
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636
  • [5] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    MARSH, JH
    ROBERTS, JS
    CLAXTON, PA
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163
  • [6] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    RAZEGHI, M
    HIRTZ, JP
    ZIEMELIS, UO
    DELALANDE, C
    ETIENNE, B
    VOOS, M
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587
  • [7] RAZEGHI M, 1986, 3RD INT C MET VAP PH
  • [8] IMPROVED MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP USING SOLID SOURCES
    ROBERTS, JS
    CLAXTON, PA
    DAVID, JPR
    MARSH, JH
    [J]. ELECTRONICS LETTERS, 1986, 22 (10) : 506 - 507
  • [9] Investigation of InGaAs-InP quantum wells by optical spectroscopy
    Skolnick, MS
    Tapster, PR
    Bass, SJ
    Pitt, AD
    Apsley, N
    Aldred, SP
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 29 - 40
  • [10] PHOTOCURRENT RESPONSE OF GAINAS/INP MULTIPLE QUANTUM WELL DETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    TEMKIN, H
    PANISH, MB
    LOGAN, RA
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 978 - 980