GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE

被引：31

作者：

CLAXTON, PA

ROBERTS, JS

DAVID, JPR

SOTOMAYORTORRES, CM

SKOLNICK, MS

TAPSTER, PR

NASH, KJ

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

[2] UNIV ST ANDREWS,DEPT PHYS,ST ANDREWS KY16 9SS,FIFE,SCOTLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90406-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：288 / 295

页数：8

共 13 条

[1] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
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[3] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
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[4] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636
[5] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
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CLAXTON, PA
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163
[6] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
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ETIENNE, B
VOOS, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587
[7] RAZEGHI M, 1986, 3RD INT C MET VAP PH
[8] IMPROVED MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP USING SOLID SOURCES
ROBERTS, JS
CLAXTON, PA
DAVID, JPR
MARSH, JH
[J]. ELECTRONICS LETTERS, 1986, 22 (10) : 506 - 507
[9] Investigation of InGaAs-InP quantum wells by optical spectroscopy
Skolnick, MS
Tapster, PR
Bass, SJ
Pitt, AD
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Aldred, SP
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 29 - 40
[10] PHOTOCURRENT RESPONSE OF GAINAS/INP MULTIPLE QUANTUM WELL DETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
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LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 978 - 980

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