IMPROVED MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP USING SOLID SOURCES

被引：13

作者：

ROBERTS, JS

CLAXTON, PA

DAVID, JPR

MARSH, JH

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 10期

关键词：

D O I：

10.1049/el:19860345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：506 / 507

页数：2

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[1] THE USE OF ION-BEAMS IN MOLECULAR-BEAM EPITAXY
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[J]. THIN SOLID FILMS, 1981, 80 (1-3) : 197 - 211
[2] IDENTIFICATION OF THE MAJOR RESIDUAL DONOR IN UNINTENTIONALLY DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
MARTIN, T
STANLEY, CR
ILIADIS, A
WHITEHOUSE, CR
SYKES, DE
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 994 - 996
[3] HOMOEPITAXIAL MOLECULAR-BEAM GROWTH OF INP ON THERMALLY CLEANED (100) ORIENTED SUBSTRATES
ROBERTS, JS
DAWSON, P
SCOTT, GB
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 905 - 907