IDENTIFICATION OF THE MAJOR RESIDUAL DONOR IN UNINTENTIONALLY DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

MARTIN, T

STANLEY, CR

ILIADIS, A

WHITEHOUSE, CR

SYKES, DE

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

[2] LOUGHBOROUGH UNIV TECHNOL,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：994 / 996

页数：3

共 17 条

[1] AUTOMATIC ELECTROCHEMICAL PROFILING OF CARRIER CONCENTRATION IN INDIUM-PHOSPHIDE
AMBRIDGE, T
ASHEN, DJ
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 647 - 648
[2] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ANDREWS, DA
HECKINGBOTTOM, R
DAVIES, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4421 - 4425
[3] METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE
BASS, SJ
PICKERING, C
YOUNG, ML
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 68 - 75
[4] PURE AND DOPED INDIUM-PHOSPHIDE BY VAPOR-PHASE EPITAXY
CLARKE, RC
TAYLOR, LL
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 43 (04) : 473 - 479
[5] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
HECKINGBOTTOM, R
OHNO, H
WOOD, CEC
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
[6] AN INVESTIGATION OF THE 1.36 EV PHOTOLUMINESCENCE SPECTRUM OF HEAT-TREATED INP USING ZEEMAN SPECTROSCOPY AND STRAIN EFFECTS
DUNCAN, KR
EAVES, L
RAMDANE, A
ROYS, WB
SKOLNICK, MS
DEAN, PJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07): : 1233 - 1245
[7] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP
EAVES, L
SMITH, AW
SKOLNICK, MS
COCKAYNE, B
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4955 - 4963
[8] STABILIZATION OF SURFACES OF III .5. COMPOUND CRYSTALS BY MOLECULAR-BEAMS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (07) : L87 - &
[9] FARROW RFC, 1982, 2ND INT S MOL BEAM E, P169
[10] ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
ASAHI, H
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 841 - 846

← 1 2 →