IDENTIFICATION OF THE MAJOR RESIDUAL DONOR IN UNINTENTIONALLY DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

MARTIN, T

STANLEY, CR

ILIADIS, A

WHITEHOUSE, CR

SYKES, DE

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

[2] LOUGHBOROUGH UNIV TECHNOL,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：994 / 996

页数：3

共 17 条

[11] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J].

MILLER, BI ;

MCFEE, JH ;

MARTIN, RJ ;

TIEN, PK .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :44-47

[12] SUBSTRATE-TEMPERATURE LIMITS FOR EPITAXY OF INP BY MBE [J].

NORRIS, MT ;

STANLEY, CR .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :617-620

[13] HOMOEPITAXIAL MOLECULAR-BEAM GROWTH OF INP ON THERMALLY CLEANED (100) ORIENTED SUBSTRATES [J].

ROBERTS, JS ;

DAWSON, P ;

SCOTT, GB .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :905-907

[14]

SULLIVAN PW, 1981, I PHYS C SER, V56, P45

[15] HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

MILLER, RC ;

CAPASSO, F ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :467-469

[16] THE 1.36 EV RADIATIVE TRANSITION IN INP - ITS DEPENDENCE ON GROWTH-CONDITIONS IN MBE AND MOCVD MATERIAL [J].

WAKEFIELD, B ;

EAVES, L ;

PRIOR, KA ;

NELSON, AW ;

DAVIES, GJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (08) :L133-L136

[17] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO [J].

WALUKIEWICZ, W ;

LAGOWSKI, J ;

JASTRZEBSKI, L ;

RAVA, P ;

LICHTENSTEIGER, M ;

GATOS, CH ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2659-2668

← 1 2 →