PHOTOCURRENT RESPONSE OF GAINAS/INP MULTIPLE QUANTUM WELL DETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：23

作者：

TEMKIN, H

PANISH, MB

LOGAN, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：978 / 980

页数：3

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共 15 条

[1] ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES
CHEMLA, DS
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[2] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 217 - 226
[3] MCCOY RD, UNPUB
[4] BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT
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[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (22) : 2173 - 2176
[5] MOHAMMED KA, UNPUB
[6] GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3571 - 3576
[7] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS
PANISH, MB
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SUMSKI, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 657 - 665
[8] GAINASP INP HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M AND GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
PANISH, MB
TEMKIN, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 785 - 787
[9] POLARITON REFLECTANCE AND PHOTOLUMINESCENCE IN HIGH-PURITY GAAS
SELL, DD
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[J]. PHYSICAL REVIEW B, 1973, 7 (10) : 4568 - 4586
[10] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 845 - 847