EFFECT OF EFFECTIVE LIFETIME MODULATION IN SEMICONDUCTORS - COMMENTS

被引：3

作者：

CRISTOLOVEANU, S ^{[1
]}

CHOVET, A ^{[1
]}

KAMARINOS, G ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECTR GRENOBLE,INST NATL POLYTECH,F-38031 GRENOBLE,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 46卷 / 01期

关键词：

D O I：

10.1002/pssa.2210460157

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K13 / K16

页数：4

共 9 条

CHOVET, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (02) :633-645

CHOVET, A ;

KAMARINOS, G .

REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (03) :345-+

[3]

CRISTOLOVEANU S, 1977, 3RD P INT C SOL SURF, P1943

[4]

KAMARINOS G, 1977, 2ND INT C TECHN SOL, P164

[5] ESFI SOS MAGNETODIODE [J].

LILIENKAMP, P ;

PFLEIDERER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (02) :479-486

[6]

LILIENKAMP P, 1977, 2ND INT C TECHN SOL, P165

[7] EFFECT OF EFFECTIVE LIFETIME MODULATION IN SEMICONDUCTORS [J].

MUNTEANU, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :291-300

[8] MAGNETODIODE MODEL [J].

PFLEIDERER, H .

[9]

PFLEIDERER H, COMMUNICATION