MAGNETODIODE MODEL

[1] ANSELM AI, 1952, ZH TEKH FIZ+, V22, P1146

[2] ON THE THEORY OF THE ISOTHERMAL HALL EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1953, 66 (404): : 753 - 758

[3] EFFECTS OF DIFFUSION AND THERMAL GENERATION ON DOUBLE INJECTION IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1435 - &

[4] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &

[5] EFFET ELECTROMAGNETOPHOTONIQUE DANS LE GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 332 - 337

[6] ELECTRICAL PINCH IN INTRINSIC ELASTICALLY BENT GERMANIUM [J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 461 - &

[7] OBSERVATION OF DOUBLE INJECTION IN LONG P+PN+ DIFFUSED SILICON JUNCTIONS AND SOME RELATED EFFECTS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (03) : 265 - +

[8] DOUBLE INJECTION CURRENTS IN LONG P-I-N DIODES WITH ONE TRAPPING LEVEL [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2179 - &

[9] NEGATIVE RESISTANCE AND GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN INHOMOGENEOUS BULK SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (05) : 561 - &

[10] LORENTZ FIELD EFFECTS IN INDIUM ANTIMONIDE AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 420 - &

[1] ANSELM AI, 1952, ZH TEKH FIZ+, V22, P1146

[2] ON THE THEORY OF THE ISOTHERMAL HALL EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1953, 66 (404): : 753 - 758

[3] EFFECTS OF DIFFUSION AND THERMAL GENERATION ON DOUBLE INJECTION IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1435 - &

[4] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &

[5] EFFET ELECTROMAGNETOPHOTONIQUE DANS LE GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 332 - 337

[6] ELECTRICAL PINCH IN INTRINSIC ELASTICALLY BENT GERMANIUM [J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 461 - &

[7] OBSERVATION OF DOUBLE INJECTION IN LONG P+PN+ DIFFUSED SILICON JUNCTIONS AND SOME RELATED EFFECTS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (03) : 265 - +

[8] DOUBLE INJECTION CURRENTS IN LONG P-I-N DIODES WITH ONE TRAPPING LEVEL [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2179 - &

[9] NEGATIVE RESISTANCE AND GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN INHOMOGENEOUS BULK SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (05) : 561 - &

[10] LORENTZ FIELD EFFECTS IN INDIUM ANTIMONIDE AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 420 - &