AGING STUDIES OF ATOMIC LAYER EPITAXY ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES

被引：18

作者：

ABUDAYAH, A

WAGER, JF

机构：

[1] Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.356070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of the aging behavior of atomic layer epitaxy (ALE) ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices is undertaken by monitoring the internal charge-phosphor field (Q-F(p) and capacitance-voltage (C-V) characteristics as a function of aging time. The electrical properties of ALE ZnS:Mn ACTFEL devices are asymmetrical with respect to the applied voltage pulse polarity; the aging characteristics of such devices are also asymmetric. The electrical asymmetries are attributed to differences in the interface state densities at the top and bottom phosphor/insulator interfaces. The presence of Cl at the indium tin oxide interface and its tendency to migrate into the ZnS during aging is believed to be the major cause of the observed asymmetrical aging characteristics.

引用

页码：3593 / 3598

页数：6

共 32 条

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