ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：110

作者：

BRESLER, MS ^{[1
]}

GUSEV, OB ^{[1
]}

KUDOYAROVA, VK ^{[1
]}

KUZNETSOV, AN ^{[1
]}

PAK, PE ^{[1
]}

TERUKOV, EI ^{[1
]}

YASSIEVICH, IN ^{[1
]}

ZAKHARCHENYA, BP ^{[1
]}

FUHS, W ^{[1
]}

STURN, A ^{[1
]}

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期

关键词：

D O I：

10.1063/1.115330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparison of the photoluminescence of Er-doped hydrogenated amorphous silicon and crystalline silicon a-Si:H(Er) and c-Si(Er), is presented. It is shown that a-Si:H(Er) exhibits efficient room-temperature photoluminescence at 1.537 mu m which is as strong as the emission from optimized c-Si(Er) at 2 K. Most remarkably, there is practically no temperature quenching of the emission intensity in the range 2-300 K. The experiments suggest that the lifetime connected with the Er-induced emission is considerably shorter in a-Si:H(Er) than in c-Si(Er) which may be responsible for the different dependences of the photoluminescence intensity on the temperature, chopping frequency, and excitation power. (C) 1995 American Institute of Physics.

引用

页码：3599 / 3601

页数：3

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