ELECTRICAL AND OPTICAL-PROPERTIES OF A-SI-H, A-SIGE-H AND A-SISN-H DEPOSITED BY MAGNETRON ASSISTED SILANE DECOMPOSITION

被引：28

作者：

MARAKHONOV, V

ROGACHEV, N

ISHKALOV, J

MARAKHONOV, J

TERUKOV, E

CHELNOKOV, V

机构：

[1] A.F.Ioffe Physico-Technical Institute, 194021 Leningrad

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80245-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical and optical properties of a-Si:H, a-SiGe:H and SiSn:H deposited by magnetron assisted silane decomposition (MASD) are reported. The photo to dark conductivity ratio for the a-SiGe:H films is shown to be close to the best results obtained by PECVD reaching near 10(4) for 1.55 eV optical bandgap.

引用

页码：817 / 820

页数：4

共 5 条

[1] THERMAL-EQUILIBRIUM PROCESSES IN CARBON-BASED AMORPHOUS SEMICONDUCTING TERNARY ALLOYS [J].