DEPOSITION OF AMORPHOUS HYDROGENATED SEMICONDUCTORS BY MAGNETRON ASSISTED SILANE DECOMPOSITION

被引：1

作者：

MARAKHONOV, VI

ROGACHEV, NA

TERUKOV, EI

ISHKALOV, JT

TRAPEZNIKOVA, IN

机构：

[1] A.F. Ioffe Physico-Technical Institute, Leningrad

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90180-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetron assisted silane decomposition (MASD) is proposed as a method for deposition of a-Si:H and its alloys. In this method a silane containing gas mixture is passed through the magnetron plasma near a target and decomposed there. The deposition rate in the case of the c-Si target is increased 3 times compared to magnetron sputtering and film properties are changed. a-SiSn:H is obtained with a Sn target.

引用

页码：571 / 573

页数：3