TRAP-CONTROLLED DISPERSIVE TRANSPORT AND EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON

被引：52

作者：

SCHIFF, EA

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

[2] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.24.6189

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6189 / 6192

页数：4

共 10 条

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[9] A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS [J].

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[10] PHOTOCONDUCTIVITY, TRAPPING, AND RECOMBINATION IN DISCHARGE-PRODUCED, HYDROGENATED AMORPHOUS-SILICON [J].

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