PHOTOCONDUCTIVITY, TRAPPING, AND RECOMBINATION IN DISCHARGE-PRODUCED, HYDROGENATED AMORPHOUS-SILICON

被引：127

作者：

WRONSKI, CR ^{[1
]}

DANIEL, RE ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.23.794

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：794 / 804

页数：11

共 31 条

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