A LIFETIME IN AUGER TRANSITIONS

[1] Auger P., 1925, CR HEBD ACAD SCI, V180, P65

[2] A NUMERICAL-ANALYSIS OF AUGER PROCESSES IN P-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4820 - 4822

[3] BAND-TO-BAND AUGER PROCESSES IN 0.95 EV BANDGAP (LAMBDA = 1.3-MU-M) (ALXGA1-X)0.48IN0.52AS LATTICE MATCHED TO INP [J]. ELECTRONICS LETTERS, 1985, 21 (02) : 58 - 59

[4] COMPOSITIONAL DEPENDENCE OF THE AUGER COEFFICIENT FOR INGAASP LATTICE MATCHED TO INP [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2713 - 2723

[5] BAND-TO-BAND AUGER PROCESSES IN 1.3-MU-M INGAASP SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (08) : 1131 - 1134

[6] AUGER TRANSITIONS IN SEMICONDUCTORS AND THEIR COMPUTATION [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35): : 6501 - 6515

[7] IMPACT IONIZATION RATE AND SOFT ENERGY THRESHOLDS FOR ANISOTROPIC PARABOLIC BAND STRUCTURES [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (01) : 48 - 53

[8] ONE-DIMENSIONAL OVERLAP FUNCTIONS AND THEIR APPLICATION TO AUGER RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295): : 486 - 495

[9] AUGER RECOMBINATION IN CD0.2HG0.8TE AND THE EFFECT OF BACKGROUND-RADIATION ON ITS MEASUREMENT [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (05) : 281 - 287

[10] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[1] Auger P., 1925, CR HEBD ACAD SCI, V180, P65

[2] A NUMERICAL-ANALYSIS OF AUGER PROCESSES IN P-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4820 - 4822

[3] BAND-TO-BAND AUGER PROCESSES IN 0.95 EV BANDGAP (LAMBDA = 1.3-MU-M) (ALXGA1-X)0.48IN0.52AS LATTICE MATCHED TO INP [J]. ELECTRONICS LETTERS, 1985, 21 (02) : 58 - 59

[4] COMPOSITIONAL DEPENDENCE OF THE AUGER COEFFICIENT FOR INGAASP LATTICE MATCHED TO INP [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2713 - 2723

[5] BAND-TO-BAND AUGER PROCESSES IN 1.3-MU-M INGAASP SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (08) : 1131 - 1134

[6] AUGER TRANSITIONS IN SEMICONDUCTORS AND THEIR COMPUTATION [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (35): : 6501 - 6515

[7] IMPACT IONIZATION RATE AND SOFT ENERGY THRESHOLDS FOR ANISOTROPIC PARABOLIC BAND STRUCTURES [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (01) : 48 - 53

[8] ONE-DIMENSIONAL OVERLAP FUNCTIONS AND THEIR APPLICATION TO AUGER RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295): : 486 - 495

[9] AUGER RECOMBINATION IN CD0.2HG0.8TE AND THE EFFECT OF BACKGROUND-RADIATION ON ITS MEASUREMENT [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (05) : 281 - 287

[10] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29